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ARS Home » Southeast Area » Stoneville, Mississippi » Crop Genetics Research » Research » Publications at this Location » Publication #424161

Research Project: Breeding Stress Tolerant Soybeans, Regeneration and Evaluation of USDA Germplasm Collection,and Management of Uniform Soybean Trials

Location: Crop Genetics Research

Title: Developing and releasing improved soybean lines with resistance to Phomopsis seed decay and low seed damage

Author
item Li, Shuxian
item Smith, James

Submitted to: Meeting Abstract
Publication Type: Abstract Only
Publication Acceptance Date: 4/30/2025
Publication Date: N/A
Citation: N/A

Interpretive Summary:

Technical Abstract: Phomopsis seed decay (PSD) is one of the most economically important seed diseases resulting in poor quality of soybean (Glycine max) seed. Diaporthe longicolla (syn. Phomopsis longicolla) is the primary cause of PSD. Control of PSD is best accomplished by planting PSD-resistant cultivars. Multiple exotic soybean accessions from the USDA soybean germplasm collection were screened for more than a decade for reaction to PSD at Stoneville, Mississippi. Seeds from inoculated and non-inoculated plots harvested either promptly at maturity, or after a two-week delay in harvest, were assessed for infection by D. longicolla. Selected resistant accessions were used to develop improved breeding lines with resistance to PSD and low seed damage over multiple cycles. Breeding line DS43-72, with combined resistance from both PIs 417050 and 587982A, had low scores for PSD and seed damage, while DS65-1, deriving resistance from PI 587982A, had the lowest seed damage score and the highest seed germination among all lines tested. Improved seed quality lines DS31-243 (PI 700941) and DS1260-2 (PI 705148), derived from PI 587982A, and DS49-142 (PI 703498), derived from PI 603756, were publicly released by the USDA. This research has led to the release of improved germplasm lines with PSD resistance and high seed quality, which benefits soybean producers and the industry at large.